CATALYTIC OXIDATION OF METHANE USING SINGLE CRYSTAL SILICON CARBIDE by AKSHOY GOPALKRISHNA A thesis submitted in partial fulfillment of the requirements for the degree of Master of Chemical Engineering
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چکیده
SiC is a hard man-made material and has emerged as an excellent material for a wide range of applications which are exposed to extreme conditions such as high temperatures and harsh chemical environments. These applications range from SiC being used as an abrasive, to a refractory material, to a semiconductor material for high power and high frequency electronic devices. The properties of the material for each application is different, with the semiconductor grade material for electronic devices being the most refined. SiC, with its excellent thermal properties and high resistance to harsh chemical environments, lends itself to being an ideal support for catalyst systems. Various characterisation & analysis techniques such as Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Gas Chromatography (GC) are used in this thesis to investigate the suitability of single crystal SiC for high temperature catalytic systems. Low temperature oxidation of methane was used to investigate the catalytic activity of: • Porous and standard 4H-SiC with and without Pd • Porous and Standard 6H-SiC with and without Pd. • Nanocrystalline Beta-SiC powder with and without Pd.
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Design And Development Of A Silicon Carbide Chemical Vapor Deposition Reactor by Matthew T. Smith A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in Chemical Engineering
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